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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
ADE-208-1062A (Z) 2nd. Edition Mar. 2001 Application
* Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2396 60 60 5 100 -100 400 150 -55 to +150 2SC2543 90 90 5 100 -100 400 150 -55 to +150 2SC2544 120 120 5 100 -100 400 150 -55 to +150 Unit V V V mA mA mW C C
Electrical Characteristics (Ta = 25C)
2SC2396 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO 60 V(BR)CEO 60 V(BR)EBO 5 ICBO IEBO
1
2SC2543 Max -- -- -- 0.1 0.1 Min 90 90 5 -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 -- -- -- 0.1 0.1 1200 0.2 -- -- --
2SC2544 Min 120 120 5 -- -- 250 -- -- -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 -- -- -- 0.1 0.1 800 0.2 -- -- -- V V Unit Test conditions V V V A A IC = 10 A, I E = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA
Typ -- -- -- -- -- -- -- 0.6 90 3.0
-- -- 250 -- -- -- --
DC current transfer ratio hFE* Collector to emitter saturation voltage Base to emitter voltage
1200 250 0.2 -- -- -- -- -- -- --
VCE(sat) VBE
Gain bandwidth product fT Collector output capacitance Cob
MHz VCE = 12 V, IC = 2 mA pF VCB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h FE1 as follows. D E 400 to 800 400 to 800 F 600 to 1200 -- 250 to 500 250 to 500
2SC2396, 2SC2543 2SC2544
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2SC2396, 2SC2543, 2SC2544
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600
400
200
0
50 100 Ambient Temperature Ta (C)
150
2SC2396, 2SC2543, 2SC2544
Package Dimensions As of January, 2001
Unit: mm
4.8 0.4
3.8 0.4
2.3 Max 0.55Max 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5Max
1.27 2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
TO-92 (1) Conforms Conforms 0.25 g
2SC2396, 2SC2543, 2SC2544
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

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